Design of a silicon-based field-effect electro-optic modulator with enhanced light-charge interaction
Optics Letters, Vol. 30, Issue 16, pp. 2149-2151 (2005)
http://dx.doi.org/10.1364/OL.30.002149
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Abstract
A new design for an all-silicon field-effect optical modulator in a ring resonator geometry is proposed and modeled by means of finite-element method simulations. It is shown that the optimal relative placement of the ultrathin field-effect-generated charge layers and the optical mode in the strong-confinement waveguides leads to more than an order-of-magnitude enhancement in the light-charge interaction compared with the recent predictions in the literature. We show that such an enhancement could provide optical modulation with a >7 dB extinction-ratio using a voltage swing of only 2 V, thus making our design compatible with complementary metal-oxide semiconductor technology.
© 2005 Optical Society of America
OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.2090) Optical devices : Electro-optical devices
(230.6120) Optical devices : Spatial light modulators
(250.7360) Optoelectronics : Waveguide modulators
Citation
Rohan D. Kekatpure, Mark L. Brongersma, and Rohit S. Shenoy, "Design of a silicon-based field-effect electro-optic modulator with enhanced light-charge interaction," Opt. Lett. 30, 2149-2151 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-16-2149
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