Abstract

An optically pumped, high-power, single-frequency semiconductor disk laser is demonstrated. A thin $\left(50\mu \mathrm{m}\right)$ diamond bonded to an InGaAsP gain chip provides the combined functions of heat removal and spectral filtering, thus eliminating the need for the additional intracavity etalons that are usually employed for single-frequency operation. In a short cavity $\left(4\mathrm{mm}\right)$ configuration we obtained a maximum output power of $470\mathrm{mW}$ at $0°\mathrm{C}$ and $170\mathrm{mW}$ at $20°\mathrm{C}$ in a near-diffraction-limited beam $(M^2<1.2)$. The emission wavelength was $1549\mathrm{nm}$ and the linewidth was less than $200\mathrm{MHz}$.

© 2005 Optical Society of America

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