Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN
Optics Letters, Vol. 30, Issue 18, pp. 2463-2465 (2005)
http://dx.doi.org/10.1364/OL.30.002463
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Abstract
We demonstrate what is to our knowledge the first example of four-photon luminescence microscopy in GaN and apply it to quality mapping of bulk GaN. The simultaneously acquired second- and third-harmonic generation can be used to map the distribution of the piezoelectric field and the band-tail state density, respectively. Through spectrum- and power-dependent studies, the fourth power dependence of the band edge luminescence is confirmed. The superb spatial resolution of the four-photon luminescence modality is also demonstrated. This technique provides a high-resolution, noninvasive monitoring and tool for examining the physical properties of semiconductors.
© 2005 Optical Society of America
OCIS Codes
(180.5810) Microscopy : Scanning microscopy
(190.4180) Nonlinear optics : Multiphoton processes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
Citation
Shi-Wei Chu, Ming-Che Chan, Shih-Peng Tai, Stacia Keller, Steven P. DenBaars, and Chi-Kuang Sun, "Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN," Opt. Lett. 30, 2463-2465 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-18-2463
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