Abstract

Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal $\mathrm{Yb}:\mathrm{K}\mathrm{Lu}{\left(\mathrm{W}{\mathrm{O}}_4\right)}_2$ is realized. A $100\mu \mathrm{m}$ thin $\mathrm{Yb}:\mathrm{K}\mathrm{Lu}{\left(\mathrm{W}{\mathrm{O}}_4\right)}_2$ layer grown on a $\mathrm{K}\mathrm{Lu}{\left(\mathrm{W}{\mathrm{O}}_4\right)}_2$ substrate is used as an active medium in a laser passively mode locked by a semiconductor saturable absorber. Pulse durations of $114\mathrm{fs}$ have been achieved for an average power of $31\mathrm{mW}$ at $1030\mathrm{nm}$. Results in the femtosecond and picosecond regimes of the $\mathrm{Yb}:\mathrm{K}\mathrm{Lu}{\left(\mathrm{W}{\mathrm{O}}_4\right)}_2∕\mathrm{K}\mathrm{Lu}{\left(\mathrm{W}{\mathrm{O}}_4\right)}_2$ laser are presented. The great potential of Yb-doped tungstate composite structures as active elements for mode-locked laser systems is demonstrated.

© 2005 Optical Society of America

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