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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Anthony J. Campillo
  • Vol. 30, Iss. 20 — Oct. 15, 2005
  • pp: 2793–2795

Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber

Hans Lindberg, Mahdad Sadeghi, Mathias Westlund, Shumin Wang, Anders Larsson, Martin Strassner, and Saulius Marcinkevicius  »View Author Affiliations


Optics Letters, Vol. 30, Issue 20, pp. 2793-2795 (2005)
http://dx.doi.org/10.1364/OL.30.002793


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Abstract

Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 µm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.

© 2005 Optical Society of America

OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7090) Lasers and laser optics : Ultrafast lasers

ToC Category:
Ultrafast Optics

Citation
Hans Lindberg, Mahdad Sadeghi, Mathias Westlund, Shumin Wang, Anders Larsson, Martin Strassner, and Saulius Marcinkevicius, "Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber," Opt. Lett. 30, 2793-2795 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-20-2793

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