Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 µm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.
© 2005 Optical Society of America
Hans Lindberg, Mahdad Sadeghi, Mathias Westlund, Shumin Wang, Anders Larsson, Martin Strassner, and Saulius Marcinkevicius, "Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber," Opt. Lett. 30, 2793-2795 (2005)