A novel two-section integrated mode-locked laser diode (MLLD) with a separate ultrafast uni-traveling carrier (UTC) saturable absorber section and semiconductor optical amplifier gain section is demonstrated. The UTC absorber is composed of a thin p-InGaAsP absorbing layer and an intrinsic InGaAsP collecting layer. By confining the photoexcitation process to the thin highly doped absorbing layer, the diffusion-limited hole extraction process is greatly enhanced. The investigated MLLD produces 600 fs uncompressed optical pulses at a 42 GHz repetition rate.
© 2005 Optical Society of America
R. Scollo, H.-J. Lohe, J. F. Holzman, F. Robin, H. Jäckel, D. Erni, W. Vogt, and E. Gini, "Mode-locked laser diode with an ultrafast integrated uni-traveling carrier saturable absorber," Opt. Lett. 30, 2808-2810 (2005)