We experimentally demonstrate ultrafast all-optical modulation using a micrometer-sized silicon photonic integrated device. The device transmission is strongly modulated by photoexcited carriers generated by low-energy pump pulses. A p-i-n junction is integrated on the structure to permit control of the generated carrier lifetimes. When the junction is reverse biased, carriers are extracted from the device in a time as short as 50 ps, permitting greater than 5 Gbit∕s modulation of optical signals on a silicon chip.
© 2005 Optical Society of America
(130.3120) Integrated optics : Integrated optics devices
(230.1150) Optical devices : All-optical devices
(230.3120) Optical devices : Integrated optics devices
(230.4110) Optical devices : Modulators
Stefan F. Preble, Qianfan Xu, Bradley S. Schmidt, and Michal Lipson, "Ultrafast all-optical modulation on a silicon chip," Opt. Lett. 30, 2891-2893 (2005)