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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Anthony J. Campillo
  • Vol. 30, Iss. 24 — Dec. 15, 2005
  • pp: 3332–3334

Statistical measures of the power dropout ratio in semiconductor lasers subject to optical feedback

Yanhua Hong and K. Alan Shore  »View Author Affiliations


Optics Letters, Vol. 30, Issue 24, pp. 3332-3334 (2005)
http://dx.doi.org/10.1364/OL.30.003332


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Abstract

The influence of the optical feedback ratio and bias current on the mean and the standard deviation of the power dropout ratio of low-frequency fluctuations in external-cavity semiconductor lasers has been studied experimentally. The power dropout ratio was found to increase with increasing optical feedback ratio and to decrease with increasing bias current.

© 2005 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(190.3100) Nonlinear optics : Instabilities and chaos

ToC Category:
Lasers and Laser Optics

Citation
Yanhua Hong and K. Alan Shore, "Statistical measures of the power dropout ratio in semiconductor lasers subject to optical feedback," Opt. Lett. 30, 3332-3334 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-24-3332


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