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Optics Letters

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  • Vol. 30, Iss. 5 — Mar. 1, 2005
  • pp: 480–482

InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-µm lasers

H. C. Lai, A. Li, K. W. Su, M. L. Ku, Y. F. Chen, and K. F. Huang  »View Author Affiliations


Optics Letters, Vol. 30, Issue 5, pp. 480-482 (2005)
http://dx.doi.org/10.1364/OL.30.000480


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Abstract

A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 µm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.

© 2005 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3540) Lasers and laser optics : Lasers, Q-switched

Citation
H. C. Lai, A. Li, K. W. Su, M. L. Ku, Y. F. Chen, and K. F. Huang, "InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-µm lasers," Opt. Lett. 30, 480-482 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-5-480


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