Sm(DBM)3Phen-doped poly(methyl methacrylate) for three-dimensional multilayered optical memory
Optics Letters, Vol. 30, Issue 7, pp. 774-776 (2005)
http://dx.doi.org/10.1364/OL.30.000774
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Abstract
We report on the formation of submicrometer voids within Sm(DBM)3Phen-doped poly(methyl methacrylate) (PMMA) under multiphoton absorption excited by an infrared laser beam. An ultrashort-pulsed laser beam with a pulse width of 200 fs at a wavelength of 800 nm is focused into doped PMMA. The large changes in refractive index and the fluorescence associated with a void allow conventional optical microscopy and reflection-type confocal microscopy to be used as detection methods. Voids can be arranged in a three-dimensional multilayered structure for high-density optical data storage.
© 2005 Optical Society of America
OCIS Codes
(160.5470) Materials : Polymers
(160.5690) Materials : Rare-earth-doped materials
(210.4680) Optical data storage : Optical memories
Citation
Hongfang Jiu, Huohong Tang, Jingli Zhou, Jie Xu, Qijin Zhang, Hui Xing, Wenhao Huang, and Andong Xia, "Sm(DBM)3Phen-doped poly(methyl methacrylate) for three-dimensional multilayered optical memory," Opt. Lett. 30, 774-776 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-7-774
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