Goos-Hänchen shifts are investigated when total reflection occurs at the interfaces associated with single-negative materials (SNMs). A general rule for judging the direction of the Goos-Hänchen lateral shift concerning lossless media is obtained: Whether the lateral shift is positive or negative depends on the sign of µ1µ2 for TE-polarized incident beams and varepsilon_1 varepsilon_2 for TM-polarized incident beams. It was theoretically demonstrated that, at the interface associated with SNMs, TE- and TM-polarized incident beams experience opposite Goos-Hänchen lateral shifts. An effective and simple approach to discriminating varepsilon-negative material and µ-negative material is proposed.
© 2005 Optical Society of America
Xiaolong Hu, Yidong Huang, Wei Zhang, De-Kui Qing, and Jiangde Peng, "Opposite Goos-Hänchen shifts for transverse-electric and transverse-magnetic beams at the interface associated with single-negative materials," Opt. Lett. 30, 899-901 (2005)