We study whether helium ion implantation can reduce the carrier lifetime and thus reduce the density of two-photon-absorption-generated free carriers. Our experiments and theoretical model show that helium ion implantation into silicon waveguides can successfully reduce the free-carrier losses and allow net gain to be attained by cw-pumped stimulated Raman scattering without requiring reverse bias to remove the photogenerated free carriers.
© 2006 Optical Society of America
Original Manuscript: January 13, 2006
Manuscript Accepted: February 17, 2006
Y. Liu and H. K. Tsang, "Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides," Opt. Lett. 31, 1714-1716 (2006)