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Optics Letters

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  • Editor: Anthony J. Campillo
  • Vol. 31, Iss. 16 — Aug. 15, 2006
  • pp: 2492–2494

Effect of focal spot size on in-band 13.5 nm extreme ultraviolet emission from laser-produced Sn plasma

Y. Tao, S. S. Harilal, M. S. Tillack, K. L. Sequoia, B. O’Shay, and F. Najmabadi  »View Author Affiliations


Optics Letters, Vol. 31, Issue 16, pp. 2492-2494 (2006)
http://dx.doi.org/10.1364/OL.31.002492


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Abstract

The effect of focal spot size on in-band 13.5 nm extreme ultraviolet (EUV) emission from laser-produced Sn plasmas was investigated for an EUV lithography light source. Almost constant in-band conversion efficiency from laser to 13.5 nm EUV light was noted with focal spot sizes from 60 to 500 μ m . This effect may be explained by the opacity of Sn plasmas. Optical interferometry showed that the EUV emission must pass through a longer plasma with higher density when the focal spot is large, and strong reabsorption of EUV light was confirmed by a dip located at 13.5 nm in the spectrum.

© 2006 Optical Society of America

OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(300.6560) Spectroscopy : Spectroscopy, x-ray
(350.5400) Other areas of optics : Plasmas

ToC Category:
Spectroscopy

History
Original Manuscript: April 17, 2006
Revised Manuscript: May 23, 2006
Manuscript Accepted: June 12, 2006
Published: July 25, 2006

Citation
Y. Tao, S. S. Harilal, M. S. Tillack, K. L. Sequoia, B. O'Shay, and F. Najmabadi, "Effect of focal spot size on in-band 13.5 nm extreme ultraviolet emission from laser-produced Sn plasma," Opt. Lett. 31, 2492-2494 (2006)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-31-16-2492


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