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Optics Letters

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  • Editor: Anthony J. Campillo
  • Vol. 31, Iss. 17 — Sep. 1, 2006
  • pp: 2565–2567

High-efficiency metal–semiconductor–metal photodetectors on heteroepitaxially grown Ge on Si

Ali K. Okyay, Ammar M. Nayfeh, Krishna C. Saraswat, Takao Yonehara, Ann Marshall, and Paul C. McIntyre  »View Author Affiliations


Optics Letters, Vol. 31, Issue 17, pp. 2565-2567 (2006)
http://dx.doi.org/10.1364/OL.31.002565


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Abstract

We demonstrate extremely efficient germanium-on-silicon metal–semiconductor–metal photodetectors with responsivities ( R ) as high as 0.85 A W at 1.55 μ m and 2 V reverse bias. Ge was directly grown on Si by using a novel heteroepitaxial growth technique, which uses multisteps of growth and hydrogen annealing to reduce surface roughness and threading dislocations that form due to the 4.2% lattice mismatch. Photodiodes on such layers exhibit reverse dark currents of 100 mA cm 2 and external quantum efficiency up to 68%. This technology is promising to realize monolithically integrated optoelectronics.

© 2006 Optical Society of America

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.3130) Integrated optics : Integrated optics materials
(230.5160) Optical devices : Photodetectors

ToC Category:
Integrated Optics

History
Original Manuscript: May 4, 2006
Manuscript Accepted: June 1, 2006
Published: August 9, 2006

Citation
Ali K. Okyay, Ammar M. Nayfeh, Krishna C. Saraswat, Takao Yonehara, Ann Marshall, and Paul C. McIntyre, "High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si," Opt. Lett. 31, 2565-2567 (2006)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-31-17-2565


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References

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