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Optics Letters

Optics Letters


  • Editor: Anthony J. Campillo
  • Vol. 31, Iss. 22 — Nov. 15, 2006
  • pp: 3345–3347

Multiphoton route to ZnO nanowire lasers

C. F. Zhang, Z. W. Dong, G. J. You, S. X. Qian, and H. Deng  »View Author Affiliations

Optics Letters, Vol. 31, Issue 22, pp. 3345-3347 (2006)

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With intense femtosecond laser excitation, multiphoton absorption-induced stimulated emission and laser emission in ZnO bulk crystal and nanowires have been demonstrated at room temperature. UV-stimulated emission peaks appeared in both bulk crystal and nanowires when the excitation exceeded certain thresholds, and a sharp lasing peak with a linewidth of 0.5 nm was observed from ZnO nanowires. The emission properties were attributed to the band-edge emission of the recombination of carriers excited by two- and three-photon absorption processes in the wide-bandgap semiconductor.

© 2006 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(190.4180) Nonlinear optics : Multiphoton processes
(250.5230) Optoelectronics : Photoluminescence

ToC Category:

Original Manuscript: July 11, 2006
Revised Manuscript: August 23, 2006
Manuscript Accepted: August 30, 2006
Published: October 26, 2006

C. F. Zhang, Z. W. Dong, G. J. You, S. X. Qian, and H. Deng, "Multiphoton route to ZnO nanowire lasers," Opt. Lett. 31, 3345-3347 (2006)

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