Electroluminescence associated with impact excitation or ionization of deep Cr2+ impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3 μm is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.
© 2006 Optical Society of America
Original Manuscript: May 30, 2006
Revised Manuscript: August 25, 2006
Manuscript Accepted: August 25, 2006
Published: November 9, 2006
Julien Jaeck, Riad Haidar, Emmanuel Rosencher, Marcel Caes, Michel Tauvy, Stéphane Collin, Natalie Bardou, Jean Luc Pelouard, Fabrice Pardo, and Philippe Lemasson, "Room-temperature electroluminescence in the mid-infrared (2-3 μm) from bulk chromium-doped ZnSe," Opt. Lett. 31, 3501-3503 (2006)