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Optics Letters

Optics Letters


  • Editor: Anthony J. Campillo
  • Vol. 31, Iss. 23 — Dec. 1, 2006
  • pp: 3501–3503

Room-temperature electroluminescence in the mid-infrared ( 2 3 μ m ) from bulk chromium-doped ZnSe

Julien Jaeck, Riad Haidar, Emmanuel Rosencher, Marcel Caes, Michel Tauvy, Stéphane Collin, Natalie Bardou, Jean Luc Pelouard, Fabrice Pardo, and Philippe Lemasson  »View Author Affiliations

Optics Letters, Vol. 31, Issue 23, pp. 3501-3503 (2006)

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Electroluminescence associated with impact excitation or ionization of deep Cr 2 + impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3 μ m is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.

© 2006 Optical Society of America

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(250.0250) Optoelectronics : Optoelectronics
(260.3060) Physical optics : Infrared
(260.3800) Physical optics : Luminescence

ToC Category:
Optical Devices

Original Manuscript: May 30, 2006
Revised Manuscript: August 25, 2006
Manuscript Accepted: August 25, 2006
Published: November 9, 2006

Julien Jaeck, Riad Haidar, Emmanuel Rosencher, Marcel Caes, Michel Tauvy, Stéphane Collin, Natalie Bardou, Jean Luc Pelouard, Fabrice Pardo, and Philippe Lemasson, "Room-temperature electroluminescence in the mid-infrared (2-3 μm) from bulk chromium-doped ZnSe," Opt. Lett. 31, 3501-3503 (2006)

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