Abstract

A free-space silicon one-dimensional photonic bandgap optical filter is designed and fabricated. A two-stage (110) wafer etching process is employed to form the extremely vertical, smooth, and high-aspect-ratio features that are essential for good optical properties. The ⟨111⟩ oriented planes of the wafer form $<0.01°$ off-vertical trenches that make up the Fabry–Perot filter. A simulation model is presented that analyzes the effect of verticality and predicts the measured spectrum well.

© 2006 Optical Society of America

Picosecond pump-probe measurement of bandgap changes in SiO2/TiO2 one-dimensional photonic bandgap structures

Jisoo Hwang, Min Jung Kim, J. W. Wu, Seung Mook Lee, and Bum Ku Rhee
Opt. Lett. 31(3) 377-379 (2006)

Terahertz demonstrations of effectively two-dimensional photonic bandgap structures

Yuguang Zhao and D. Grischkowsky
Opt. Lett. 31(10) 1534-1536 (2006)

The effect of interfacial roughness on the normal incidence bandgap of one-dimensional photonic crystals

Karlene Rosera Maskaly, W. Craig Carter, Richard D. Averitt, and James L. Maxwell
Opt. Express 13(21) 8380-8389 (2005)

Low-loss optical channel drop filters based on high-contrast Si–air photonic crystals by wet anisotropic etching

M. Renilkumar and Prita Nair
Appl. Opt. 50(25) E59-E64 (2011)

Ultrafast tunable filter in two-dimensional organic photonic crystal

Xiaoyong Hu, Qihuang Gong, Yuanhao Liu, Bingying Cheng, and Daozhong Zhang
Opt. Lett. 31(3) 371-373 (2006)