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Optics Letters

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  • Editor: Anthony J. Campillo
  • Vol. 31, Iss. 9 — May. 1, 2006
  • pp: 1337–1339

Tapered semiconductor amplifiers for optical frequency combs in the near infrared

Flavio C. Cruz, Matthew C. Stowe, and Jun Ye  »View Author Affiliations


Optics Letters, Vol. 31, Issue 9, pp. 1337-1339 (2006)
http://dx.doi.org/10.1364/OL.31.001337


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Abstract

A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780 nm from a mode-locked Ti:sapphire laser. Energy gains of more than 17 dB ( 12 dB ) are obtained for 1 mW ( 20 mW ) of average input power when the input pulses are stretched into the picosecond range. A spectral window of supercontinuum light generated in a photonic fiber has also been amplified. Interferometric measurements show sub-Hertz linewidths for a heterodyne beat between the input and amplified comb components, yielding no detectable phase-noise degradation under amplication. These amplifiers can be used to boost the infrared power in f-to- 2 f interferometers used to determine the carrier-to-envelope offset frequency, with clear advantages for stabilization of octave-spanning femtosecond lasers and other supercontinuum light sources.

© 2006 Optical Society of America

OCIS Codes
(120.3930) Instrumentation, measurement, and metrology : Metrological instrumentation
(250.5980) Optoelectronics : Semiconductor optical amplifiers
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

History
Original Manuscript: December 1, 2005
Revised Manuscript: January 17, 2006
Manuscript Accepted: January 18, 2006

Citation
Flavio C. Cruz, Matthew C. Stowe, and Jun Ye, "Tapered semiconductor amplifiers for optical frequency combs in the near infrared," Opt. Lett. 31, 1337-1339 (2006)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-31-9-1337


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References

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