Abstract

Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of $3.2\mathrm{THz}$ ($93\mu \mathrm{m}$ or $\sim 13\mathrm{meV}$ work function) is demonstrated by using a $1\times {10}^{18}{\mathrm{cm}}^{-3}$ Si-doped GaAs emitter and an undoped ${\mathrm{Al}}_{0.04}{\mathrm{Ga}}_{0.96}\mathrm{As}$ barrier structure. The peak responsivity of $6.5\mathrm{A}∕\mathrm{W}$, detectivity of $5.5\times {10}^8$ Jones, and quantum efficiency of 19% were obtained at $7.1\mathrm{THz}$ under a bias field of $0.7\mathrm{kV}∕\mathrm{cm}$ at $6\mathrm{K}$, while the detector spectral response range spans from $3.2\text{to}30\mathrm{THz}$.

© 2007 Optical Society of America

Dual-band pixelless upconversion imaging devices

Le Ke Wu, Hui Lian Hao, Wen Zhong Shen, Gamini Ariyawansa, A. G. Unil Perera, and Steven G. Matsik
Opt. Lett. 32(16) 2366-2368 (2007)

Terahertz frontside-illuminated quantum-well photodetector

Mikhail Patrashin and Iwao Hosako
Opt. Lett. 33(2) 168-170 (2008)

High-power tunable, 0.5-3 THz radiation source based on nonlinear difference frequency mixing of CO₂ laser lines

Sergei Ya. Tochitsky, Chieh Sung, Sarah E. Trubnick, Chan Joshi, and Konstantin L. Vodopyanov
J. Opt. Soc. Am. B 24(9) 2509-2516 (2007)

Comparative study of terahertz radiation from n-InAs and n-GaAs

Dong-Feng Liu and Du Xu
Appl. Opt. 46(5) 789-794 (2007)

Lighting object-based nondoped-type white organic light-emitting diode with N,N^′-diphenyl-N,N^′-bis(1-naphthyl)-(1,1^′-benzidine)-4,4^′-diamine as the chromaticity-tuning layer

Jianzhuo Zhu, Wenlian Li, Zisheng Su, Bei Chu, Liangliang Han, Dongfang Yang, Defeng Bi, Bin Li, Zhizhi Hu, Zhiqiang Zhang, and Taiju Tsuboi
Opt. Lett. 32(24) 3537-3539 (2007)