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Optics Letters

Optics Letters


  • Editor: Anthony J. Campillo
  • Vol. 32, Iss. 10 — May. 15, 2007
  • pp: 1338–1340

Mass-limited Sn target irradiated by dual laser pulses for an extreme ultraviolet lithography source

Y. Tao, M. S. Tillack, S. S. Harilal, K. L. Sequoia, R. A. Burdt, and F. Najmabadi  »View Author Affiliations

Optics Letters, Vol. 32, Issue 10, pp. 1338-1340 (2007)

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A thin Sn film was investigated as a mass-limited target for an extreme ultraviolet (EUV) lithography source. It was found that those energetic ions that are intrinsic with the mass-limited Sn target could be efficiently mitigated by introducing a low-energy prepulse. High in-band conversion efficiency from a laser to 13.5 nm EUV light could be obtained using an Sn film with a thickness down to 30 nm when irradiated by dual laser pulses. It was shown that the combination of dual pulse and inert Ar gas could fully mitigate ions with a low ambient pressure nearly without the penalty of the absorption of the EUV light.

© 2007 Optical Society of America

OCIS Codes
(300.6560) Spectroscopy : Spectroscopy, x-ray
(340.7480) X-ray optics : X-rays, soft x-rays, extreme ultraviolet (EUV)
(350.4990) Other areas of optics : Particles
(350.5400) Other areas of optics : Plasmas

ToC Category:

Original Manuscript: December 11, 2006
Revised Manuscript: February 12, 2007
Manuscript Accepted: February 14, 2007
Published: April 17, 2007

Y. Tao, M. S. Tillack, S. S. Harilal, K. L. Sequoia, R. A. Burdt, and F. Najmabadi, "Mass-limited Sn target irradiated by dual laser pulses for an extreme ultraviolet lithography source," Opt. Lett. 32, 1338-1340 (2007)

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