We present tamper resistance in optical excitation transfer via optical near-field interactions based on the energy dissipation process occurring locally in nanometric devices such as quantum dots. A theoretical comparison with electrical systems is also shown, focusing on the required environmental conditions. Numerical simulations based on virtual photon models demonstrate high tamper resistance.
© 2007 Optical Society of America
Original Manuscript: February 5, 2007
Manuscript Accepted: April 26, 2007
Published: June 13, 2007
Makoto Naruse, Hirokazu Hori, Kiyoshi Kobayashi, and Motoichi Ohtsu, "Tamper resistance in optical excitation transfer based on optical near-field interactions," Opt. Lett. 32, 1761-1763 (2007)