Semiconductor laser with extended cavity and intracavity atomic filter
Optics Letters, Vol. 32, Issue 13, pp. 1869-1871 (2007)
http://dx.doi.org/10.1364/OL.32.001869
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Abstract
We report on peculiar dynamic features of laser oscillation in a cavity with a semiconductor junction as the gain medium and an intracavity atomic absorber. The output face of the semiconductor is antireflection coated, and lasing action is achieved by using a diffraction grating to close the laser cavity. The spectral analysis of the laser emission evidences a stable emission with narrow linewidth when the oscillating frequency is resonant with the atomic absorber. We also observe frequency bistability and instability. The change between these regimes is controlled through the bias current in a very reproducible way.
© 2007 Optical Society of America
OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(190.1450) Nonlinear optics : Bistability
ToC Category:
Nonlinear Optics
History
Original Manuscript: February 28, 2007
Revised Manuscript: April 6, 2007
Manuscript Accepted: April 8, 2007
Published: June 21, 2007
Citation
L. B. Barbosa, T. Sorrentino, D. N. Ferreira, D. Reyes Ardila, M. Chevrollier, and M. Oriá, "Semiconductor laser with extended cavity and intracavity atomic filter," Opt. Lett. 32, 1869-1871 (2007)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-32-13-1869
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