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Optics Letters

Optics Letters


  • Editor: Anthony J. Campillo
  • Vol. 32, Iss. 14 — Jul. 15, 2007
  • pp: 2022–2024

SiGe optoelectronic metal-oxide semiconductor field-effect transistor

Ali K. Okyay, Abhijit J. Pethe, Duygu Kuzum, Salman Latif, David A.B. Miller, and Krishna C. Saraswat  »View Author Affiliations

Optics Letters, Vol. 32, Issue 14, pp. 2022-2024 (2007)

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We propose a novel semiconductor optoelectronic switch that is a fusion of a Ge optical detector and a Si metal-oxide semiconductor field-effect transistor (MOSFET). The device operation is investigated with simulations and experiments. The switch can be fabricated at the nanoscale with extremely low capacitance. This device operates in telecommunication standard wavelengths, hence providing the surrounding Si circuitry with noise immunity from signaling. The Ge gate absorbs light, and the gate photocurrent is amplified at the drain terminal. Experimental current gain of up to 1000 × is demonstrated. The device exhibits increased responsivity ( 3.5 × ) and lower off-state current ( 4 × ) compared with traditional detector schemes.

© 2007 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(130.0250) Integrated optics : Optoelectronics
(130.3120) Integrated optics : Integrated optics devices
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Integrated Optics

Original Manuscript: March 28, 2007
Revised Manuscript: May 6, 2007
Manuscript Accepted: May 11, 2007
Published: July 5, 2007

Ali K. Okyay, Abhijit J. Pethe, Duygu Kuzum, Salman Latif, David A. Miller, and Krishna C. Saraswat, "SiGe optoelectronic metal-oxide semiconductor field-effect transistor," Opt. Lett. 32, 2022-2024 (2007)

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