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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Anthony J. Campillo
  • Vol. 32, Iss. 18 — Sep. 15, 2007
  • pp: 2680–2682

Optical waveguide structure for an all-optical switch based on intersubband transitions in In Ga As Al As Sb quantum wells

Yuriy Fedoryshyn, Patric Strasser, Ping Ma, Franck Robin, and Heinz Jäckel  »View Author Affiliations


Optics Letters, Vol. 32, Issue 18, pp. 2680-2682 (2007)
http://dx.doi.org/10.1364/OL.32.002680


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Abstract

A vertical slab waveguide design for an all-optical switch based on intersubband transitions in molecular beam epitaxy (MBE)-grown coupled double In Ga As Al As Sb quantum well (QW) structures is presented. We propose a waveguide with two surrounding high refractive index InGaAsP guiding layers, which confine the optical mode in the low refractive index QW region and thus enable light guiding with low contrast InP cladding layers. We investigate the proposed concept by means of 1D simulations of several waveguide configurations. We confirm its validity by fabricating deeply etched waveguiding structures using either wet- or dry-etching technologies. Optical losses as low as 13.5 dB cm 1 and 12.8 dB cm 1 were measured for TM- and TE-polarized light, respectively.

© 2007 Optical Society of America

OCIS Codes
(230.1150) Optical devices : All-optical devices
(230.7370) Optical devices : Waveguides

ToC Category:
Optical Devices

History
Original Manuscript: July 5, 2007
Revised Manuscript: August 3, 2007
Manuscript Accepted: August 6, 2007
Published: September 4, 2007

Citation
Yuriy Fedoryshyn, Patric Strasser, Ping Ma, Franck Robin, and Heinz Jäckel, "Optical waveguide structure for an all-optical switch based on intersubband transitions in InGaAs/AlAsSb quantum wells," Opt. Lett. 32, 2680-2682 (2007)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-32-18-2680


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References

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  8. One-dimensional simulations were realized with the use of the software provided by Professor J. Faist from the University of Neuchatel, Switzerland.
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  11. The following growth rates were determined by HR-XRD: 5 nm/min In0.53Ga0.47As, 7.35 nm/min AlAs0.56Sb0.44, 5.05 nm/min In0.78Ga0.22As0.45P0.55, and 3.5 nm/min InP.
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