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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Anthony J. Campillo
  • Vol. 32, Iss. 19 — Oct. 1, 2007
  • pp: 2843–2845

Enhancement of the evanescent field using polymer waveguides fabricated by deep UV exposure on mesoporous silicon

Dominik G. Rabus, Lisa A. DeLouise, and Yasuhisa Ichihashi  »View Author Affiliations


Optics Letters, Vol. 32, Issue 19, pp. 2843-2845 (2007)
http://dx.doi.org/10.1364/OL.32.002843


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Abstract

Polymer integrated reverse symmetry waveguides on porous silicon substrate fabricated by using deep ultraviolet radiation in poly(methyl methacrylate) are presented. The layer sequence and geometry of the waveguide enable an evanescent field extending more than 3 μ m into the upper waveguide or analyte layer, enabling various integrated optical devices where large evanescent fields are required. The presented fabrication technique enables the generation of defined regions where the evanescent field is larger than in the rest of the waveguide. This technology can improve the performance of evanescent-wave-based waveguide devices.

© 2007 Optical Society of America

OCIS Codes
(130.3130) Integrated optics : Integrated optics materials
(130.5460) Integrated optics : Polymer waveguides

ToC Category:
Integrated Optics

History
Original Manuscript: June 27, 2007
Revised Manuscript: August 24, 2007
Manuscript Accepted: August 26, 2007
Published: September 26, 2007

Virtual Issues
Vol. 2, Iss. 11 Virtual Journal for Biomedical Optics

Citation
Dominik G. Rabus, Lisa A. DeLouise, and Yasuhisa Ichihashi, "Enhancement of the evanescent field using polymer waveguides fabricated by deep UV exposure on mesoporous silicon," Opt. Lett. 32, 2843-2845 (2007)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-32-19-2843


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