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Optics Letters

Optics Letters


  • Editor: Anthony J. Campillo
  • Vol. 32, Iss. 20 — Oct. 15, 2007
  • pp: 2906–2908

Edge-view photodetector for optical interconnects

Zhihua Li, Huajun Shen, Chengyue Yang, Baoxia Li, Lixi Wan, and Daniel Guidotti  »View Author Affiliations

Optics Letters, Vol. 32, Issue 20, pp. 2906-2908 (2007)

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A new semiconductor photodetector design is reported. The PIN active area of the photodetector is fabricated on a sloping sidewall of a mesa structure. The photodetector is referred to as an edge-view photodetector (EVPD) and simplifies the integration of optical circuits by direct end coupling, eliminating the need for 45 ° mirrors. The EVPD geometry can reduce the cost of optical interconnects by simplifying the fabrication process and making possible automatic alignment between photodetectors and waveguides or optical fibers. The EVPD fabrication process and initial measurement results are presented. The main processing steps include deep anisotropic chemical etching, material growth, and lithography on a 3-D surface.

© 2007 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(130.3120) Integrated optics : Integrated optics devices
(130.5990) Integrated optics : Semiconductors
(160.2100) Materials : Electro-optical materials
(230.0040) Optical devices : Detectors

ToC Category:
Optical Devices

Original Manuscript: June 6, 2007
Revised Manuscript: August 31, 2007
Manuscript Accepted: September 2, 2007
Published: October 1, 2007

Zhihua Li, Huajun Shen, Chengyue Yang, Baoxia Li, Lixi Wan, and Daniel Guidotti, "Edge-view photodetector for optical interconnects," Opt. Lett. 32, 2906-2908 (2007)

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