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Optics Letters

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  • Vol. 32, Iss. 5 — Mar. 1, 2007
  • pp: 500–502

Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver

Jonghyun Shin, Pallab Bhattacharya, Hao-Chih Yuan, Zhenqiang Ma, and György Váró  »View Author Affiliations


Optics Letters, Vol. 32, Issue 5, pp. 500-502 (2007)
http://dx.doi.org/10.1364/OL.32.000500


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Abstract

A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA W .

© 2007 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic
(160.0160) Materials : Materials
(160.1890) Materials : Detector materials

ToC Category:
Materials

History
Original Manuscript: October 2, 2006
Revised Manuscript: December 4, 2006
Manuscript Accepted: December 5, 2006
Published: February 2, 2007

Citation
Jonghyun Shin, Pallab Bhattacharya, Hao-Chih Yuan, Zhenqiang Ma, and György Váró, "Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver," Opt. Lett. 32, 500-502 (2007)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-32-5-500


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