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Optics Letters

Optics Letters


  • Editor: Anthony J. Campillo
  • Vol. 32, Iss. 6 — Mar. 15, 2007
  • pp: 680–682

Ultrafast opto-terahertz photonic crystal modulator

L. Fekete, F. Kadlec, P. Kužel, and H. Němec  »View Author Affiliations

Optics Letters, Vol. 32, Issue 6, pp. 680-682 (2007)

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We present an agile optically controlled switch or modulator of terahertz (THz) radiation. The element is based on a one-dimensional photonic crystal with a GaAs wafer inserted in the middle as a defect layer. The THz electric field is enhanced in the photonic structure at the surfaces of the GaAs wafer. Excitation of the front GaAs surface by ultrashort 810 nm laser pulses then leads to an efficient modulation of the THz beam even at low photocarrier concentrations ( 10 16 cm 3 ) . The response time of the element to pulsed photoexcitation is about 130 ps .

© 2007 Optical Society of America

OCIS Codes
(160.5140) Materials : Photoconductive materials
(230.1150) Optical devices : All-optical devices
(230.4110) Optical devices : Modulators
(300.6270) Spectroscopy : Spectroscopy, far infrared
(300.6530) Spectroscopy : Spectroscopy, ultrafast

ToC Category:
Optical Devices

Original Manuscript: November 28, 2006
Manuscript Accepted: December 22, 2006
Published: February 15, 2007

L. Fekete, F. Kadlec, P. Kužel, and H. Němec, "Ultrafast opto-terahertz photonic crystal modulator," Opt. Lett. 32, 680-682 (2007)

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