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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 33, Iss. 10 — May. 15, 2008
  • pp: 1138–1140

Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator

Subal Sahni, Xi Luo, Jian Liu, Ya-hong Xie, and Eli Yablonovitch  »View Author Affiliations

Optics Letters, Vol. 33, Issue 10, pp. 1138-1140 (2008)

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We propose and demonstrate a novel Ge photodetector on silicon-on-insulator based on a junction field effect transistor structure, where the field-effect transistor gate is replaced by a Ge island with no contact on it. Light incident on the Ge switches on the device by altering the conductance of the Si channel through secondary photoconductivity. The device’s sensitivity is also enhanced by a vast reduction in parasitic capacitance. In cw measurements, proof-of-concept detectors exhibit up to a 33 % change in Si channel conductance by absorbing only 200 nW of power at 1.55 μ m . In addition, pulsed response tests have shown that rise times as low as 40 ps can be achieved.

© 2008 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(130.3120) Integrated optics : Integrated optics devices
(130.5990) Integrated optics : Semiconductors
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:
Integrated Optics

Original Manuscript: March 7, 2008
Revised Manuscript: April 8, 2008
Manuscript Accepted: April 9, 2008
Published: May 14, 2008

Subal Sahni, Xi Luo, Jian Liu, Ya-hong Xie, and Eli Yablonovitch, "Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator," Opt. Lett. 33, 1138-1140 (2008)

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