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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 33, Iss. 19 — Oct. 1, 2008
  • pp: 2185–2187

Wide temperature range operation of micrometer-scale silicon electro-optic modulators

Sasikanth Manipatruni, Rajeev K. Dokania, Bradley Schmidt, Nicolás Sherwood-Droz, Carl B. Poitras, Alyssa B. Apsel, and Michal Lipson  »View Author Affiliations

Optics Letters, Vol. 33, Issue 19, pp. 2185-2187 (2008)

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We demonstrate high bit rate electro-optic modulation in a resonant micrometer-scale silicon modulator over an ambient temperature range of 15 K . We show that low bit error rates can be achieved by varying the bias current through the device to thermally counteract the ambient temperature changes. Robustness in the presence of thermal variations can enable a wide variety of applications for dense on chip electronic photonic integration.

© 2008 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.3990) Integrated optics : Micro-optical devices

ToC Category:
Integrated Optics

Original Manuscript: April 11, 2008
Revised Manuscript: June 20, 2008
Manuscript Accepted: July 15, 2008
Published: September 24, 2008

Sasikanth Manipatruni, Rajeev K. Dokania, Bradley Schmidt, Nicolás Sherwood-Droz, Carl B. Poitras, Alyssa B. Apsel, and Michal Lipson, "Wide temperature range operation of micrometer-scale silicon electro-optic modulators," Opt. Lett. 33, 2185-2187 (2008)

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