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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 33, Iss. 2 — Jan. 15, 2008
  • pp: 168–170

Terahertz frontside-illuminated quantum-well photodetector

Mikhail Patrashin and Iwao Hosako  »View Author Affiliations

Optics Letters, Vol. 33, Issue 2, pp. 168-170 (2008)

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We have demonstrated the operation of a frontside-illuminated Ga As Al Ga As quantum-well photodetector based on intersubband absorption in a quantum well (QW) with a targeted peak frequency of 3 THz . A multiple-quantum-well structure consists of 20 periods of 18 nm QWs interleaved by 80 nm barriers with an Al alloy content of 2%. We measured the following performance characteristics: dark current, responsivity, and spectral response. A responsivity of 13 mA W at an electric bias of 40 mV and an operating temperature of 3 K was obtained with a peak response close to the designed detection frequency. The dark current density was a few μ A cm 2 and was limited by thermally assisted tunneling through the barriers. We looked also at possible designs to optimize the device’s performance.

© 2008 Optical Society of America

OCIS Codes
(040.4200) Detectors : Multiple quantum well
(160.6000) Materials : Semiconductor materials
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:

Original Manuscript: September 17, 2007
Revised Manuscript: November 30, 2007
Manuscript Accepted: December 12, 2007
Published: January 10, 2008

Mikhail Patrashin and Iwao Hosako, "Terahertz frontside-illuminated quantum-well photodetector," Opt. Lett. 33, 168-170 (2008)

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