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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 33, Iss. 24 — Dec. 15, 2008
  • pp: 2907–2909

Highly reflective Ag–Cu alloy-based ohmic contact on p-type GaN using Ru overlayer

Jun Ho Son, Gwan Ho Jung, and Jong-Lam Lee  »View Author Affiliations

Optics Letters, Vol. 33, Issue 24, pp. 2907-2909 (2008)

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We report on a metallization scheme of high reflectance, low resistance, and smooth surface morphology ohmic contact on p-type GaN. Ag–Cu alloy/Ru contact showed low contact resistivity as low as 6.2 × 10 6 Ω cm 2 and high reflectance of 91% at 460 nm after annealing at 400 ° C in air ambient. The oxidation annealing promoted the out-diffusion of Ga atoms to dissolve in an Ag–Cu layer with the formation of an Ag–Ga solid solution, lowering the contact resistivity. The Ru overlayer acts as a diffusion barrier for excessive oxygen incorporation during oxidation annealing, resulting in high reflectance, good thermal stability, and smooth surface quality of the contact.

© 2008 Optical Society of America

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Optical Devices

Original Manuscript: August 4, 2008
Revised Manuscript: October 29, 2008
Manuscript Accepted: November 2, 2008
Published: December 4, 2008

Jun Ho Son, Gwan Ho Jung, and Jong-Lam Lee, "Highly reflective Ag-Cu alloy-based ohmic contact on p-type GaN using Ru overlayer," Opt. Lett. 33, 2907-2909 (2008)

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