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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 33, Iss. 3 — Feb. 1, 2008
  • pp: 258–260

Mid-infrared wire-grid polarizer with silicides

Itsunari Yamada, Kenji Kintaka, Junji Nishii, Satoshi Akioka, Yutaka Yamagishi, and Mitsunori Saito  »View Author Affiliations


Optics Letters, Vol. 33, Issue 3, pp. 258-260 (2008)
http://dx.doi.org/10.1364/OL.33.000258


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Abstract

An infrared (IR) polarizer with tungsten silicide (WSi) wire grid was fabricated by two-beam interference exposure and reactive ion etching. To enhance TM transmittance, silicon monoxide was deposited between the WSi wire grid ( 400 nm period) and a Si substrate. The transmittance was over 80% in the 4 5 μ m wavelength range. The ratio of TM and TE transmittances was over 100 ( 20 dB ) in the 2.5 6 μ m wavelength range. The fabricated polarizer has higher durability and bettter compatibility with microfabrication processes compared with conventional IR polarizers.

© 2008 Optical Society of America

OCIS Codes
(230.5440) Optical devices : Polarization-selective devices
(310.1210) Thin films : Antireflection coatings
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:
Optical Design and Fabrication

History
Original Manuscript: October 2, 2007
Revised Manuscript: December 10, 2007
Manuscript Accepted: December 13, 2007
Published: January 29, 2008

Citation
Itsunari Yamada, Kenji Kintaka, Junji Nishii, Satoshi Akioka, Yutaka Yamagishi, and Mitsunori Saito, "Mid-infrared wire-grid polarizer with silicides," Opt. Lett. 33, 258-260 (2008)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-33-3-258


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References

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