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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 33, Iss. 6 — Mar. 15, 2008
  • pp: 569–571

Enhancement of band-edge emission induced by defect transition in the composite of ZnO nanorods and CdSe ZnS quantum dots

Lin-Jie Tzeng, Chung-Liang Cheng, and Yang-Fang Chen  »View Author Affiliations

Optics Letters, Vol. 33, Issue 6, pp. 569-571 (2008)

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A new and general approach to enhance band-edge emission at the expense of defect emission in a semiconductor nanocomposite is proposed. The underlying mechanism is based on the resonance effect between defect transition and band-to-band excitation and transfer of excited electrons between conduction band edges. With our approach, it is possible to convert defect loss into bandgap emission. As an example, we demonstrate that the bandgap emission of ZnO nanorods can be enhanced by as much as 30 times when they are compounded with CdSe ZnS nanoparticles.

© 2008 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:

Original Manuscript: November 16, 2007
Revised Manuscript: February 4, 2008
Manuscript Accepted: February 4, 2008
Published: March 11, 2008

Lin-Jie Tzeng, Chung-Liang Cheng, and Yang-Fang Chen, "Enhancement of band-edge emission induced by defect transition in the composite of ZnO nanorods and CdSe/ZnS quantum dots," Opt. Lett. 33, 569-571 (2008)

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