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Optics Letters

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  • Vol. 33, Iss. 9 — May. 1, 2008
  • pp: 965–967

Normal-incidence silicon–gadolinium multilayers for imaging at 63 nm wavelength

Benjawan Kjornrattanawanich, David L. Windt, and John F. Seely  »View Author Affiliations


Optics Letters, Vol. 33, Issue 9, pp. 965-967 (2008)
http://dx.doi.org/10.1364/OL.33.000965


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Abstract

Si Gd multilayers designed as narrowband reflective coatings near 63 nm were developed. The highest peak reflectance of 26.2% at a 5 ° incident angle was obtained at 62 nm , and the spectral bandwidth was 7.3 nm FWHM. The fits for x-ray and extreme ultraviolet reflectance data of Si Gd multilayers indicate the possibility of silicide formation at the Si Gd interfaces. B 4 C , W, and SiN were deposited as interface barrier layers to improve the reflectance of Si Gd multilayers. More than an 8% increase in reflectance was observed from the interface-engineered Si W Gd and Si B 4 C Gd multilayers.

© 2008 Optical Society of America

OCIS Codes
(230.4170) Optical devices : Multilayers
(310.6860) Thin films : Thin films, optical properties
(340.0340) X-ray optics : X-ray optics
(350.1260) Other areas of optics : Astronomical optics

ToC Category:
Optical Devices

History
Original Manuscript: December 19, 2007
Revised Manuscript: February 28, 2008
Manuscript Accepted: March 17, 2008
Published: April 28, 2008

Citation
Benjawan Kjornrattanawanich, David L. Windt, and John F. Seely, "Normal-incidence silicon–gadolinium multilayers for imaging at 63 nm wavelength," Opt. Lett. 33, 965-967 (2008)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-33-9-965


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