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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 34, Iss. 10 — May. 15, 2009
  • pp: 1534–1536

Silicon-nitride surface passivation of submicrometer silicon waveguides for low-power optical switches

Joris Van Campenhout, William M.J. Green, Xiaoping Liu, Solomon Assefa, Richard M. Osgood, and Yurii A. Vlasov  »View Author Affiliations

Optics Letters, Vol. 34, Issue 10, pp. 1534-1536 (2009)

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We report on a Si 3 N 4 -based surface-passivation technique for increasing free-carrier lifetimes in submicrometer silicon-on-insulator waveguides by up to 2 orders of magnitude. The carrier lifetime was measured by injecting free carriers into a critically coupled ring resonator through photoexcitation by short pump pulses and subsequently tracking the spectral detuning of the resonator during the carrier-recombination phase. Carrier lifetimes of up to 70 ns were obtained in waveguides passivated with a 45-nm-thick Si 3 N 4 coating. Such surface passivation is essential for low-power operation of optical switches based on carrier injection.

© 2009 Optical Society of America

OCIS Codes
(130.3130) Integrated optics : Integrated optics materials
(230.2090) Optical devices : Electro-optical devices
(240.0310) Optics at surfaces : Thin films
(130.4815) Integrated optics : Optical switching devices

ToC Category:
Integrated Optics

Original Manuscript: February 11, 2009
Revised Manuscript: April 11, 2009
Manuscript Accepted: April 14, 2009
Published: May 8, 2009

Joris Van Campenhout, William M. J. Green, Xiaoping Liu, Solomon Assefa, Richard M. Osgood, and Yurii A. Vlasov, "Silicon-nitride surface passivation of submicrometer silicon waveguides for low-power optical switches," Opt. Lett. 34, 1534-1536 (2009)

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