Direct-gap optical gain of Ge on Si at room temperature
Optics Letters, Vol. 34, Issue 11, pp. 1738-1740 (2009)
http://dx.doi.org/10.1364/OL.34.001738
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Abstract
Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to achieve efficient light emission and optical gain from its direct gap transition. We report on what is to our knowledge the first experimental observation of optical gain in the wavelength range of 1600–1608 nm from the direct-gap transition of
© 2009 Optical Society of America
OCIS Codes
(130.5990) Integrated optics : Semiconductors
(160.3380) Materials : Laser materials
(250.5980) Optoelectronics : Semiconductor optical amplifiers
ToC Category:
Integrated Optics
History
Original Manuscript: March 13, 2009
Revised Manuscript: April 23, 2009
Manuscript Accepted: April 26, 2009
Published: May 29, 2009
Citation
Jifeng Liu, Xiaochen Sun, Lionel C. Kimerling, and Jurgen Michel, "Direct-gap optical gain of Ge on Si at room temperature," Opt. Lett. 34, 1738-1740 (2009)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-34-11-1738
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