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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 34, Iss. 14 — Jul. 15, 2009
  • pp: 2207–2209

Wavelength-sized, tunable nanocavity in deeply etched In P In Ga As P In P photonic crystals

H. H.J.E. Kicken, I. Barbu, R. W. van der Heijden, F. Karouta, R. Nötzel, E. van der Drift, and H. W.M. Salemink  »View Author Affiliations

Optics Letters, Vol. 34, Issue 14, pp. 2207-2209 (2009)

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Wavelength-sized point defect cavities coupled to access waveguides are reported for deeply etched In P In Ga As P In P two-dimensional photonic crystals. The observed quality factor of 60 is comparable to those found for one-row defect Fabry–Perot cavities and for simple point defect cavities in membranes. The quality factor was changed by varying the number of rows of holes. Upon infiltration of the holes with liquid crystal, frequency tuning was demonstrated.

© 2009 Optical Society of America

OCIS Codes
(130.1750) Integrated optics : Components
(250.5300) Optoelectronics : Photonic integrated circuits

ToC Category:

Original Manuscript: April 14, 2009
Manuscript Accepted: June 2, 2009
Published: July 13, 2009

H. H. J. E. Kicken, I. Barbu, R. W. van der Heijden, F. Karouta, R. Nötzel, E. van der Drift, and H. W. M. Salemink, "Wavelength-sized, tunable nanocavity in deeply etched InP/InGaAsP/InP photonic crystals," Opt. Lett. 34, 2207-2209 (2009)

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