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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 34, Iss. 15 — Aug. 1, 2009
  • pp: 2348–2350

Diode-pumped passively mode-locked 1342 nm Nd : Y V O 4 laser with an AlGaInAs quantum-well saturable absorber

S. C. Huang, H. L. Cheng, Yi-Fan Chen, K. W. Su, Y. F. Chen, and K. F. Huang  »View Author Affiliations

Optics Letters, Vol. 34, Issue 15, pp. 2348-2350 (2009)

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We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd : Y V O 4 laser at 1342 nm . The QWs are grown on a Fe-doped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.

© 2009 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3580) Lasers and laser optics : Lasers, solid-state
(140.4050) Lasers and laser optics : Mode-locked lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: May 26, 2009
Revised Manuscript: July 9, 2009
Manuscript Accepted: July 10, 2009
Published: July 29, 2009

S. C. Huang, H. L. Cheng, Yi-Fan Chen, K. W. Su, Y. F. Chen, and K. F. Huang, "Diode-pumped passively mode-locked 1342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorber," Opt. Lett. 34, 2348-2350 (2009)

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