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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 34, Iss. 16 — Aug. 15, 2009
  • pp: 2504–2506

Broadband near-infrared luminescence in γ-irradiated Bi-doped α - Ba B 2 O 4 single crystals

Liangbi Su, Jun Yu, Peng Zhou, Hongjun Li, Lihe Zheng, Yan Yang, Feng Wu, Haiping Xia, and Jun Xu  »View Author Affiliations


Optics Letters, Vol. 34, Issue 16, pp. 2504-2506 (2009)
http://dx.doi.org/10.1364/OL.34.002504


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Abstract

Spectroscopic properties of as-grown and γ-irradiated undoped and Bi-doped α-BBO ( Ba B 2 O 4 ) single crystals were investigated. Bi 2 + and color centers in Bi : α -BBO crystals were investigated to be nonluminescent in the near-infrared (NIR) region. Broadband NIR luminescence at 1139 nm with a FWHM of 108 nm and a decay time of 526 μ s was realized in Bi : α -BBO crystal through γ irradiation. Bi + was attributed to be responsible for the NIR emission, which can be bleached by thermal annealing. The involved physical processes in Bi : α -BBO crystal during the courses of irradiation and heat annealing were tentatively established.

© 2009 Optical Society of America

OCIS Codes
(160.2540) Materials : Fluorescent and luminescent materials
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence

ToC Category:
Materials

History
Original Manuscript: June 1, 2009
Revised Manuscript: July 9, 2009
Manuscript Accepted: July 16, 2009
Published: August 13, 2009

Citation
Liangbi Su, Jun Yu, Peng Zhou, Hongjun Li, Lihe Zheng, Yan Yang, Feng Wu, Haiping Xia, and Jun Xu, "Broadband near-infrared luminescence in γ-irradiated Bi-doped α-BaB2O4 single crystals," Opt. Lett. 34, 2504-2506 (2009)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-34-16-2504


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