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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 34, Iss. 16 — Aug. 15, 2009
  • pp: 2507–2509

Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning

Ting-Ting Kang, Masatomo Yamamoto, Mikiyasu Tanaka, Akihiro Hashimoto, Akio Yamamoto, Ryota Sudo, Akifumi Noda, D. W. Liu, and Kohji Yamamoto  »View Author Affiliations


Optics Letters, Vol. 34, Issue 16, pp. 2507-2509 (2009)
http://dx.doi.org/10.1364/OL.34.002507


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Abstract

Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal–organic chemical-vapor deposition for frequencies from 0.2 to 2.0 THz . This non-Drude behavior is explained based on the electron back-scattering theory of Smith [Phys. Rev. B 65, 115206 (2002)] . Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier to be subjected to non-Drude behavior in electrical performance.

© 2009 Optical Society of America

OCIS Codes
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(310.0310) Thin films : Thin films
(300.6495) Spectroscopy : Spectroscopy, teraherz

ToC Category:
Spectroscopy

History
Original Manuscript: June 2, 2009
Revised Manuscript: July 14, 2009
Manuscript Accepted: July 26, 2009
Published: August 13, 2009

Citation
Ting-Ting Kang, Masatomo Yamamoto, Mikiyasu Tanaka, Akihiro Hashimoto, Akio Yamamoto, Ryota Sudo, Akifumi Noda, D. W. Liu, and Kohji Yamamoto, "Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning," Opt. Lett. 34, 2507-2509 (2009)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-34-16-2507


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