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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 34, Iss. 18 — Sep. 15, 2009
  • pp: 2802–2804

Low-threshold thin-film III–V lasers bonded to silicon with front and back side defined features

Sabarni Palit, Jeremy Kirch, Gene Tsvid, Luke Mawst, Thomas Kuech, and Nan Marie Jokerst  »View Author Affiliations

Optics Letters, Vol. 34, Issue 18, pp. 2802-2804 (2009)

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A III–V thin-film single-quantum-well edge-emitting laser is patterned on both sides of the epitaxial layer and bonded to silicon. Injected threshold current densities of 420 A cm 2 for gain-guided lasers with bottom p-stripes and top n-stripes and 244 A cm 2 for index-guided bottom p-ridge and top n-stripe lasers are measured with a lasing wavelength of 995 nm . These threshold current densities, among the lowest for thin-film edge-emitting lasers on silicon reported to date (to our knowledge), enable the implementation of integrated applications such as power-efficient portable chip-scale photonic sensing systems.

© 2009 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.3120) Optical devices : Integrated optics devices
(250.5300) Optoelectronics : Photonic integrated circuits
(130.6622) Integrated optics : Subsystem integration and techniques
(310.6845) Thin films : Thin film devices and applications
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Integrated Optics

Original Manuscript: July 2, 2009
Revised Manuscript: August 12, 2009
Manuscript Accepted: August 17, 2009
Published: September 10, 2009

Sabarni Palit, Jeremy Kirch, Gene Tsvid, Luke Mawst, Thomas Kuech, and Nan Marie Jokerst, "Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features," Opt. Lett. 34, 2802-2804 (2009)

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