Effects of oxide formation around core circumference of silicon-on-oxidized-porous-silicon strip waveguides
Optics Letters, Vol. 34, Issue 20, pp. 3142-3144 (2009)
http://dx.doi.org/10.1364/OL.34.003142
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Abstract
We have studied the effect of oxidation on the propagation loss and surface roughness of silicon-on-oxidized-porous-silicon strip waveguides fabricated using proton-beam irradiation and electrochemical etching. A thin thermal oxide is formed around the core of the waveguide, enabling the symmetric reduction of core size and roughness on all sides. Significant loss reduction from about
© 2009 Optical Society of America
OCIS Codes
(220.4000) Optical design and fabrication : Microstructure fabrication
(230.7370) Optical devices : Waveguides
(290.5880) Scattering : Scattering, rough surfaces
ToC Category:
Optical Devices
History
Original Manuscript: August 7, 2009
Revised Manuscript: September 9, 2009
Manuscript Accepted: September 10, 2009
Published: October 8, 2009
Citation
E. J. Teo, B. Q. Xiong, Y. S. Ow, M. B. H. Breese, and A. A. Bettiol, "Effects of oxide formation around core circumference of silicon-on-oxidized-porous-silicon strip waveguides," Opt. Lett. 34, 3142-3144 (2009)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-34-20-3142
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