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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 34, Iss. 21 — Nov. 1, 2009
  • pp: 3358–3360

Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers

Raveen Kumaran, Scott E. Webster, Shawn Penson, Wei Li, Thomas Tiedje, Peng Wei, and Francois Schiettekatte  »View Author Affiliations

Optics Letters, Vol. 34, Issue 21, pp. 3358-3360 (2009)

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Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the Nd 3 + ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at 1096 nm with an emission cross section of 11.9 × 10 19 cm 2 , similar to the 1064 nm line of Nd : Y V O 4 .

© 2009 Optical Society of America

OCIS Codes
(160.3380) Materials : Laser materials
(160.5690) Materials : Rare-earth-doped materials
(310.0310) Thin films : Thin films

ToC Category:

Original Manuscript: June 12, 2009
Manuscript Accepted: September 10, 2009
Published: October 27, 2009

Raveen Kumaran, Scott E. Webster, Shawn Penson, Wei Li, Thomas Tiedje, Peng Wei, and Francois Schiettekatte, "Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers," Opt. Lett. 34, 3358-3360 (2009)

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