Optical polariton modes in a nanoscale semiconductor
Optics Letters, Vol. 34, Issue 21, pp. 3436-3438 (2009)
http://dx.doi.org/10.1364/OL.34.003436
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Abstract
Because of the existence of an exciton–biexciton transition inside an optically excited semiconductor, the dielectric constant is modified to be a wave-vector-dependent function. The spatial dispersion relation leads to three propagating modes of polariton, for which two additional boundary conditions will be required. In the vicinity of a resonance, the mathematical study shows that two modes among the three dominate, and the third wave with a large imaginary part can be neglected without affecting the essential physics. Based on the study, a criterion is developed for selecting the appropriate modes. Numerical results are presented for a thin semiconducting film.
© 2009 Optical Society of America
OCIS Codes
(000.4430) General : Numerical approximation and analysis
(240.5420) Optics at surfaces : Polaritons
ToC Category:
Optics at Surfaces
History
Original Manuscript: May 5, 2009
Revised Manuscript: October 7, 2009
Manuscript Accepted: October 7, 2009
Published: October 30, 2009
Citation
Gang Bao and Yuanchang Sun, "Optical polariton modes in a nanoscale semiconductor," Opt. Lett. 34, 3436-3438 (2009)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-34-21-3436
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