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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 34, Iss. 23 — Dec. 1, 2009
  • pp: 3604–3606

Optical investigation of band-edge structure and built-in electric field of Al Ga N Ga N heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy

Ching-Hwa Ho and Jheng-Wei Lee  »View Author Affiliations

Optics Letters, Vol. 34, Issue 23, pp. 3604-3606 (2009)

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The band-edge property and built-in electric fields of two different Al x Ga 1 x N Ga N ( Al Ga N Ga N ) heterostructures (HSs) with and without an additional AlGaN inserted layer were studied by thermoreflectance (TR), photoluminescence (PL), and contactless electroreflectance (CER) techniques. The PL spectra characterize the band-edge luminescence property of GaN. Free exciton transitions of AlGaN and GaN were probed experimentally by TR. Prominent Franz–Keldysh oscillations (FKOs) of GaN and the opposite FKO phase of AlGaN were simultaneously detected by the additional AlGaN inserted sample with CER owing to the enhancement effect of built-in electric fields of GaN and AlGaN with the same polarity direction. Optoelectronics properties of the two HSs were characterized by the experimental analyses.

© 2009 Optical Society of America

OCIS Codes
(300.6380) Spectroscopy : Spectroscopy, modulation
(300.6470) Spectroscopy : Spectroscopy, semiconductors

ToC Category:

Original Manuscript: September 15, 2009
Revised Manuscript: October 19, 2009
Manuscript Accepted: October 20, 2009
Published: November 17, 2009

Ching-Hwa Ho and Jheng-Wei Lee, "Optical investigation of band-edge structure and built-in electric field of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy," Opt. Lett. 34, 3604-3606 (2009)

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