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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 34, Iss. 24 — Dec. 15, 2009
  • pp: 3785–3787

Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 μ m

Ventsislav Lavchiev, Roman Holly, Gang Chen, Friedrich Schäffler, Rüdiger Goldhahn, and Wolfgang Jantsch  »View Author Affiliations


Optics Letters, Vol. 34, Issue 24, pp. 3785-3787 (2009)
http://dx.doi.org/10.1364/OL.34.003785


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Abstract

This work demonstrates a rib waveguide photodetector based on a vertical Si p-i-n junction with Ge islands operating in the spectral region around λ = 1.55 μ m at room temperature. A vertical stack of four layers of Ge islands is grown by molecular beam epitaxy on a silicon-on-insulator. Each layer is organized in a two-dimensional square grid with a period of 460 nm . The spectral response of the detector extends well beyond 1.6 μ m at 300 K . The absorption length of 135 μ m (at 1/e decrease of intensity) at λ = 1.55 μ m along the waveguide allows for relatively small-size devices for all-on-one-platform integration.

© 2009 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(130.0130) Integrated optics : Integrated optics
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Detectors

History
Original Manuscript: September 29, 2009
Manuscript Accepted: October 31, 2009
Published: December 3, 2009

Citation
Ventsislav Lavchiev, Roman Holly, Gang Chen, Friedrich Schäffler, Rüdiger Goldhahn, and Wolfgang Jantsch, "Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 μm," Opt. Lett. 34, 3785-3787 (2009)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-34-24-3785


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