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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 34, Iss. 8 — Apr. 15, 2009
  • pp: 1198–1200

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel  »View Author Affiliations


Optics Letters, Vol. 34, Issue 8, pp. 1198-1200 (2009)
http://dx.doi.org/10.1364/OL.34.001198


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Abstract

We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to engineer the band structure of Ge to enhance the direct gap luminescence efficiency by increasing the injected electron population in the direct Γ valley. Room-temperature EL is observed at the direct gap energy from a Ge Si p-i-n diode exhibiting the same characteristics of the direct gap photoluminescence of Ge. The integral direct gap EL intensity increases superlinearly with electrical current owing to an indirect valley filling effect. These results indicate a promising future of tensile-strained Ge-on-Si for electrically pumped, monolithically integrated light emitters on Si.

© 2009 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.5990) Integrated optics : Semiconductors
(230.3670) Optical devices : Light-emitting diodes
(250.5230) Optoelectronics : Photoluminescence

ToC Category:
Integrated Optics

History
Original Manuscript: January 15, 2009
Manuscript Accepted: February 12, 2009
Published: April 7, 2009

Citation
Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel, "Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes," Opt. Lett. 34, 1198-1200 (2009)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-34-8-1198


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