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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 34, Iss. 9 — May. 1, 2009
  • pp: 1345–1347

Electrically pumped hybrid evanescent Si In Ga As P lasers

Xiankai Sun, Avi Zadok, Michael J. Shearn, Kenneth A. Diest, Alireza Ghaffari, Harry A. Atwater, Axel Scherer, and Amnon Yariv  »View Author Affiliations


Optics Letters, Vol. 34, Issue 9, pp. 1345-1347 (2009)
http://dx.doi.org/10.1364/OL.34.001345


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Abstract

Hybrid Si/III–V, Fabry–Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III–V gain material for the first time to our knowledge. The lasing threshold current of 300 - μ m -long devices was as low as 24 mA , with a maximal single facet output power of 4.2 mW at 15 ° C . Longer devices achieved a maximal single facet output power as high as 12.7 mW , a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA cm 2 . Continuous wave laser operation was obtained up to 45 ° C . The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.

© 2009 Optical Society of America

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Optoelectronics

History
Original Manuscript: January 22, 2009
Revised Manuscript: March 16, 2009
Manuscript Accepted: March 26, 2009
Published: April 21, 2009

Citation
Xiankai Sun, Avi Zadok, Michael J. Shearn, Kenneth A. Diest, Alireza Ghaffari, Harry A. Atwater, Axel Scherer, and Amnon Yariv, "Electrically pumped hybrid evanescent Si/InGaAsP lasers," Opt. Lett. 34, 1345-1347 (2009)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-34-9-1345


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