Analytical study of optical bistability in silicon ring resonators
Optics Letters, Vol. 35, Issue 1, pp. 55-57 (2010)
http://dx.doi.org/10.1364/OL.35.000055
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Abstract
We analyze theoretically the nonlinear phenomenon of optical bistability inside a ring resonator formed with a silicon-waveguide nanowire and derive an exact parametric relation connecting the output intensity to the input intensity. Our input–output relation accounts for linear losses, the Kerr nonlinearity, two-photon absorption, free-carrier-induced absorption and dispersion, and thermo-optic effects within the resonator. Based on our study, we generalize the standard definition of effective length to allow for all possible losses within a silicon ring resonator. We also present a simplified version of the bistable phenomenon valid for resonators operating in a regime in which losses resulting from two-photon absorption are relatively small. Our analytical results provide clear insight into the physics behind optical bistability and may be useful for designing silicon-based optical memories.
© 2009 Optical Society of America
OCIS Codes
(040.6040) Detectors : Silicon
(140.4780) Lasers and laser optics : Optical resonators
(190.1450) Nonlinear optics : Bistability
(230.4320) Optical devices : Nonlinear optical devices
(250.6715) Optoelectronics : Switching
(250.4390) Optoelectronics : Nonlinear optics, integrated optics
ToC Category:
Optoelectronics
History
Original Manuscript: October 14, 2009
Revised Manuscript: November 22, 2009
Manuscript Accepted: November 23, 2009
Published: December 24, 2009
Citation
Ivan D. Rukhlenko, Malin Premaratne, and Govind P. Agrawal, "Analytical study of optical bistability in silicon ring resonators," Opt. Lett. 35, 55-57 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-1-55
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